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Highlights of research

Improvements to the Sink Strength Theory Used in Multi-Scale Rate Equation Simulations of Defects in Solids,
Tommy Ahlgren and Kalle Heinola, Materials 13 (2020) 2621.

The application of kinetic Rate Equations (kRE) have proven to be a versatile method in simulating defect dynamics and temporal changes in the microstructure of materials.
The reliability and usefulness of the method, however, depends critically on the defect interaction parameters used.
Hydrogen isotope exchange in tungsten during annealing in hydrogen atmosphere,
T. Ahlgren, P. Jalkanen, K. Mizohata, V. Tuboltsev, J. Raisanen, K. Heinola and P. Tikkanen,
Nuclear Fusion 59 (2019) 026016.

The radiological safety of the future thermonuclear fusion devices depends critically on the total tritium inventory in the plasma-facing components.
Sink strength simulations using the Monte Carlo method: applied to spherical traps,
T. Ahlgren and L. Bukonte, Journal of Nuclear Materials, 496 (2017) 66.

Thermodynamics of impurity-enhanced vacancy formation in metals,
L. Bukonte, T. Ahlgren and Kalle Heinola, J. Appl. Phys. 121 (2017) 045102.

Modelling of monovacancy diffusion in W over wide temperature range,
L. Bukonte, T. Ahlgren and K. Heinola, J. Appl. Phys. 115 (2014) 123504.

Simulation of irradiation induced deuterium trapping in tungsten,
T. Ahlgren, K. Heinola, K. Vörtler, and J. Keinonen, Journal of Nuclear Materials, 427 (2012) 152.

Plastic deformation of single nanometer-sized crystals,
L. Sun, A. V. Krasheninnikov, T. Ahlgren, K. Nordlund and F. Banhart, Phys. Rev. Lett. 101 (2008) 156101.

Fast Monte Carlo simulation for elastic ion backscattering,
P. Pusa, T. Ahlgren and E. Rauhala, Nucl. Instr. And Meth. B, 219-220 (2004) 95.

Concentration of interstitial and substitutional nitrogen in GaN(x)As(1-x),
T. Ahlgren, E. Vainonen-Ahlgren, J. Likonen, W. Li and M. Pessa, Appl. Phys. Lett. 80 (2002) 2314.

Origin of improved luminescence efficiency after annealing of Ga(In)NAs materials grown by molecular-beam epitaxy,
Wei Li, Markus Pessa, Tommy Ahlgren and James Dekker,
Appl. Phys. Lett. 79 (2001) 1094.

Identification of vacancy charge states in diffusion of arsenic in germanium,
E. Vainonen-Ahlgren, T. Ahlgren, J. Likonen, S. Lehto, J. Keinonen, W. Li and J. Haapamaa,
Appl. Phys. Lett. 77 (2000) 690.

Suppression of carbon erosion by hydrogen shielding during high-flux hydrogen bombardment,
E. Salonen, K. Nordlund, J. Tarus, T. Ahlgren and J. Keinonen,
Phys. Rev. B (rapid communications), 60 (1999) 14005.

Identification of Si interstitials in ion implanted GaAs,
T. Ahlgren, Phys. Rev. Lett. 81 (1998) 842.

Concentration dependent and independent Si diffusion in ion implanted GaAs,
T. Ahlgren, J. Likonen, J. Slotte, J. Räisänen, M. Rajatora and J. Keinonen,
Phys. Rev. B, 56 (1997) 4597.